Nanochannel device and method for manufacturing thereof
US8384195B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | May 4, 2011 |
| Grant date | Feb 26, 2013 |
| Priority date | — |
| Expiry date | Jul 15, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/764
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to a device comprising a mono-crystalline substrate, the mono-crystalline substrate having at least one recessed region which exposes predetermined crystallographic planes of the mono-crystalline substrate, the at least one recessed region further having a recess width and comprising a filling material and an embedded nanochannel, wherein the width, the shape, and the depth of the embedded nanochannel is determined by the recess width of the at least one recessed region and by the growth rate of the growth front of the filling material in a direction perpendicular to the exposed predetermined crystallographic planes. The present disclosure is also related to a method for manufacturing a nanochannel device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.