Semiconductor apparatus with improved efficiency of thermal radiation
US8384211B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 30, 2009 |
| Grant date | Feb 26, 2013 |
| Priority date | — |
| Expiry date | Jul 6, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/13055
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor apparatus includes a first stacked body including a first radiator plate, a first insulating layer, a first conductive layer and a first semiconductor element in this order; a second stacked body including a second radiator plate, a second insulating layer, a second conductive layer and a second semiconductor element in this order and configured to be made of a semiconductor material different from that of the first semiconductor element; and a connecting part configured to electrically connect the first conductive layer and the second conductive layer, wherein the first stacked body and the second stacked body are thermally insulated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.