Patent · US Active

Semiconductor structure, pad structure and protection structure

US8384214B2 · kind B2 · utility

1Cited by
6References
16Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 13, 2009
Grant dateFeb 26, 2013
Priority date
Expiry dateOct 13, 2029

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/1461
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor structure is provided. The semiconductor structure includes a substrate, a dielectric layer, a pad structure and a protection structure. The dielectric layer is disposed on the substrate. The pad structure is disposed in the dielectric layer. The pad structure includes a plurality of first metal layers and a plurality of plugs which are electrically connected to each other vertically. There is no contact plug disposed between the pad structure and the substrate. The protection structure is disposed in the dielectric layer and encompasses the pad structure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.