Memory resistor having plural different active materials
US8385101B2 · kind B2 · utility
5Cited by
6References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 30, 2010 |
| Grant date | Feb 26, 2013 |
| Priority date | — |
| Expiry date | Jul 28, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/56
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Methods and means related to memory resistors are provided. A memristor includes at least two different active materials disposed between a pair of electrodes. The active materials are selected to exhibit respective and opposite changes in electrical resistance in response to changes in oxygen ion content. The active materials are subject to oxygen ion reconfiguration under the influence of an applied electric field. An electrical resistance of the memristor is thus adjustable by way of applied programming voltages and is non-volatile between programming events.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.