Magnetic memory with a thermally assisted spin transfer torque writing procedure using a low writing current
US8385107B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 4, 2010 |
| Grant date | Feb 26, 2013 |
| Priority date | — |
| Expiry date | Oct 31, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3286
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetic random access memory (MRAM) cell with a thermally assisted switching (TAS) writing procedure, comprising a magnetic tunnel junction formed from a ferromagnetic storage layer having a first magnetization adjustable at a high temperature threshold, a ferromagnetic reference layer having a fixed second magnetization, and an insulating layer, said insulating layer being disposed between the ferromagnetic storage and reference layers; a select transistor being electrically connected to said magnetic tunnel junction and controllable via a word line; a current line, electrically connected to said magnetic tunnel junction, passing at least a write current; characterized in that the magnetocrystalline anisotropy of the ferromagnetic storage layer is substantially orthogonal with the magnetocrystalline anisotropy of the ferromagnetic reference layer. The STT-based TAS-MRAM cell achieves simultaneously thermal stability and requires low write current density.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.