Gate oxide breakdown-withstanding power switch structure
US8385149B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2011 |
| Grant date | Feb 26, 2013 |
| Priority date | — |
| Expiry date | Oct 14, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/417
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention proposes a gate oxide breakdown-withstanding power switch structure, which is connected with an SRAM and comprises a first CMOS switch and a second CMOS switch respectively having different gate-oxide thicknesses or different threshold voltages. The CMOS switch, which has a normal gate-oxide thickness or a normal threshold voltage, provides current for the SRAM to wake up the SRAM from a standby or sleep mode to an active mode. The CMOS switch, which has a thicker gate-oxide thickness or a higher threshold voltage, provides current for the SRAM to work in an active mode. The present invention prevents a power switch from gate-oxide breakdown lest noise margin, stabilization and performance of SRAM be affected.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.