Inventor · Hsinchu, TW

Hao-I Yang

33Patents
5h-index
62Co-inventors
68Inventor score

Filing activity: May 3, 2010 → Mar 31, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US8958237B1 Static random access memory timing tracking circuit Physics 20 Active
US8320164B2 Static random access memory with data controlled power supply Physics 18 Active
US8345504B2 Data-aware dynamic supply random access memory Physics 12 Active
US8659936B2 Low power static random access memory Physics 11 Active
US8437178B2 Static random access memory cell and method of operating the same Physics 6 Active
US8385149B2 Gate oxide breakdown-withstanding power switch structure Physics 5 Active
US8498174B2 Dual-port subthreshold SRAM cell Physics 5 Active
US10340897B2 Clock generating circuit and method of operating the same Physics 4 Active
US8804445B2 Oscillato based on a 6T SRAM for measuring the bias temperature instability Physics 4 Active
US9484084B2 Pulling devices for driving data lines Electricity 3 Active
US8259510B2 Disturb-free static random access memory cell Physics 2 Active
US9721651B2 Write driver and level shifter having shared transistors Electricity 2 Active
US10574213B2 Clock circuit and method of operating the same Physics 2 Active
US10951200B2 Clock circuit and method of operating the same Physics 2 Active
US12188686B2 Air curtain device and workpiece processing tool Mechanical Engineering; Lighting; Heating 1 Active
US11133039B2 Power switch control in a memory device Physics 1 Active
US9299391B2 Three-dimensional wordline sharing memory Electricity 1 Active
US11323101B2 Clock circuit and method of operating the same Physics 1 Active
US11734142B2 Scan synchronous-write-through testing architectures for a memory device Physics 0 Active
US12205635B2 Memory module with improved timing adaptivity of sensing amplification Electricity 0 Active
US8854897B2 Static random access memory apparatus and bit-line voltage controller thereof Physics 0 Active
US10276232B2 Read margin tracking in memory applications Physics 0 Active
US9711209B2 Three-dimensional wordline sharing memory Electricity 0 Active
US9202937B2 Semiconductor device Electricity 0 Active
US10121520B2 Memory array and method of forming the same Physics 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.