Lateral power MOSFET with high breakdown voltage and low on-resistance

US8389341B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Tsung-Yi Huang · Hsinchu, TW
• Puo-Yu Chiang · Sanxing, TW
• Ruey-Hsin Liu · Baoshan, TW
• Shun-Liang Hsu · Baoshan, TW
• Chyi-Chyuan Huang · Taipei, TW
• Fu-Hsin Chen · Hsinchu, TW
• Eric Huang · Temple City, US

Key dates

• Filing date: Jul 1, 2011
• Grant date: Mar 5, 2013
• Expiry date: Sep 13, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/516

Abstract

A semiconductor structure includes a semiconductor substrate of a first conductivity type; a pre-high-voltage well (pre-HVW) in the semiconductor substrate, wherein the pre-HVW is of a second conductivity type opposite the first conductivity type; a high-voltage well (HVW) over the pre-HVW, wherein the HVW is of the second conductivity type; a field ring in the HVW and occupying a top portion of the HVW, wherein the field ring is of the first conductivity type; an insulation region over and in contact with the field ring and a portion of the HVW; a gate electrode partially over the insulation region; a drain region in the HVW, wherein the drain region is of the second conductivity type; and wherein the HVW horizontally extends further toward the drain region than the pre-HVW; and a source region adjacent to, and on an opposite side of the gate electrode than the drain region.