Manufacturing method and structure of non-volatile memory

US8389358B2 · kind B2 · utility

Assignee

• UNITED MICROELECTRONICS CORP. · TW

Inventors

• Hung-Lin Shih · Hsinchu, TW
• Chih-Ta Chen · New Taipei, TW

Key dates

• Filing date: Jul 22, 2011
• Grant date: Mar 5, 2013
• Expiry date: Nov 8, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6891

Abstract

A non-volatile memory structure includes a substrate; a poly gate structure formed on the substrate; a contact etching stop layer formed over the poly gate structure and including at least a silicon nitride layer and a first silicon oxide layer overlying the silicon nitride layer; and an inter-layer dielectric layer formed on the first silicon oxide layer. The first silicon oxide layer has a density higher than that of the inter-layer dielectric layer.