Photonic device and method of making the same
US8389388B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 30, 2009 |
| Grant date | Mar 5, 2013 |
| Priority date | — |
| Expiry date | May 1, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A photonic device (200) and method (100) of making the photonic device (200) employs preferential etching of grain boundaries of a polycrystalline semiconductor material layer (210). The method (100) includes growing (110) the polycrystalline layer (210) on a substrate (201). The polycrystalline layer includes a transition region (212) of variously oriented grains and a region (214) of columnar grain boundaries (215) adjacent to the transition region. The method further includes preferentially etching (120) the columnar grain boundaries to provide tapered structures (220) of the semiconductor material that are continuous (217) with respective aligned grains (213) of the transition region. The tapered structures are predominantly single crystal. The method further includes forming (140) a conformal semiconductor junction (240) on the tapered structures and providing (160) first and second electrodes. The first electrode (201, 262) is adjacent to the transition region and the second electrode (260) is adjacent to a surface layer of the conformal semiconductor junction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.