Light-emitting structure

US8390004B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Adrian Stefan Avramescu · Regensburg, DE
• Hans-Juergen Lugauer · Sinzing, DE
• Matthias Peter · Orpund, CH
• Stephan P. Miller · Vadnais Heights, US

Key dates

• Filing date: Aug 25, 2008
• Grant date: Mar 5, 2013
• Expiry date: Jan 17, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/812

Abstract

A light-emitting structure includes a p-doped region for injecting holes and an n-doped region for injecting electrons. At least one InGaN quantum well of a first type and at least one InGaN quantum well of a second type are arranged between the n-doped region and the p-doped region. The InGaN quantum well of the second type has a higher indium content than the InGaN quantum well of the first type.