Semiconductor memory element and semiconductor memory device
US8390054B2 · kind B2 · utility
2Cited by
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21Claims
0Family size
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Key dates
| Filing date | Sep 13, 2010 |
| Grant date | Mar 5, 2013 |
| Priority date | — |
| Expiry date | Feb 16, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
According to one embodiment, a semiconductor memory element includes a semiconductor layer, a tunnel insulator provided on the semiconductor layer, a charge accumulation film provided on the tunnel insulator having a film thickness of 0.9 nm or more and 2.8 nm or less and the charge accumulation film containing cubic HfO2 particles, a block insulator provided on the charge accumulation film, and a control electrode provided on the block insulator.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.