Sealed air gap for semiconductor chip
US8390079B2 · kind B2 · utility
22Cited by
20References
4Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 28, 2010 |
| Grant date | Mar 5, 2013 |
| Priority date | — |
| Expiry date | Jan 5, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
A semiconductor chip including a substrate; a dielectric layer over the substrate; a gate within the dielectric layer, the gate including a sidewall; a contact contacting a portion of the gate and a portion of the sidewall; and a sealed air gap between the sidewall, the dielectric layer and the contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.