Inventor · Irvine, CA, US

Shom Ponoth

223Patents

18h-index

113Co-inventors

85Inventor score

Filing activity: Oct 11, 2002 → Feb 22, 2018

Most-cited inventions

Patent	Title	Area	Cited by	Status
US8482132B2	Pad bonding employing a self-aligned plated liner for adhesion enhancement	Electricity	203	Active
US8569152B1	Cut-very-last dual-epi flow	Electricity	59	Active
US8420459B1	Bulk fin-field effect transistors with well defined isolation	Electricity	57	Active
US8299625B2	Borderless interconnect line structure self-aligned to upper and lower level contact vias	Electricity	40	Active
US9257348B2	Methods of forming replacement gate structures for transistors and the resulting devices	Electricity	31	Active
US9064801B1	Bi-layer gate cap for self-aligned contact formation	Electricity	31	Active
US9219153B2	Methods of forming gate structures for FinFET devices and the resulting semiconductor products	Electricity	26	Active
US8785284B1	FinFETs and fin isolation structures	Electricity	24	Active
US8232618B2	Semiconductor structure having a contact-level air gap within the interlayer dielectrics above a semiconductor device and a method of forming the semiconductor structure using a self-assembly approach	Electricity	24	Active
US8581320B1	MOS capacitors with a finfet process	Electricity	24	Active
US8390079B2	Sealed air gap for semiconductor chip	Electricity	22	Active
US8906807B2	Single fin cut employing angled processing methods	Electricity	20	Active
US9177820B2	Sub-lithographic semiconductor structures with non-constant pitch	Electricity	19	Active
US8987790B2	Fin isolation in multi-gate field effect transistors	Electricity	19	Active
US8999774B2	Bulk fin-field effect transistors with well defined isolation	Electricity	19	Active
US8492274B2	Metal alloy cap integration	Electricity	18	Active
US7790601B1	Forming interconnects with air gaps	Electricity	18	Active
US8932918B2	FinFET with self-aligned punchthrough stopper	Electricity	18	Active
US8288268B2	Microelectronic structure including air gap	Electricity	17	Active
US9082853B2	Bulk finFET with punchthrough stopper region and method of fabrication	Electricity	17	Active
US8604539B2	Bulk fin-field effect transistors with well defined isolation	Electricity	17	Active
US8896067B2	Method of forming finFET of variable channel width	Electricity	16	Active
US8592290B1	Cut-very-last dual-EPI flow	Electricity	15	Active
US7943480B2	Sub-lithographic dimensioned air gap formation and related structure	Electricity	15	Active
US8623712B2	Bulk fin-field effect transistors with well defined isolation	Electricity	15	Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.