Semiconductor device and method of fabricating the same
US8390120B2 · kind B2 · utility
26Cited by
3References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 27, 2010 |
| Grant date | Mar 5, 2013 |
| Priority date | — |
| Expiry date | Dec 23, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/01327
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a via structure and a conductive structure. The via structure has a surface with a planar portion and a protrusion portion. The conductive structure is formed over at least part of the planar portion and not over at least part of the protrusion portion of the via structure. For example, the conductive structure is formed only onto the planar portion and not onto any of the protrusion portion for forming high quality connection between the conductive structure and the via structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.