Thin-film capacitor structures embedded in semiconductor packages and methods of making
US8391017B2 · kind B2 · utility
4Cited by
12References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 20, 2010 |
| Grant date | Mar 5, 2013 |
| Priority date | — |
| Expiry date | Jan 26, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2203/1126
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Provided are semiconductor packages comprising at least one thin-film capacitor attached to a printed wiring board core through build-up layers, wherein a first electrode of the thin-film capacitor comprises a thin nickel foil, a second electrode of the thin-film capacitor comprises a copper electrode, and a copper layer is formed on the nickel foil. The interconnections between the thin-film capacitor and the semiconductor device provide a low inductance path to transfer charge to and from the semiconductor device. Also provided are methods for fabricating such semiconductor packages.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.