Magnetic memory with a thermally assisted writing procedure and reduced writing field
US8391053B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 4, 2010 |
| Grant date | Mar 5, 2013 |
| Priority date | — |
| Expiry date | Oct 28, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1659
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic random access memory (MRAM) cell with a thermally assisted switching (TAS) writing procedure, comprising a magnetic tunnel junction formed from a ferromagnetic storage layer having a first magnetization adjustable at a high temperature threshold, a ferromagnetic reference layer having a fixed second magnetization direction, and an insulating layer, said insulating layer being disposed between the ferromagnetic storage and reference layers; a select transistor being electrically connected to said magnetic tunnel junction and controllable via a word line; a current line electrically connected to said magnetic tunnel junction; characterized in that the magnetocrystalline anisotropy of the ferromagnetic storage layer is essentially orthogonal with the magnetocrystalline anisotropy of the ferromagnetic reference layer. The TAS-MRAM cell of the invention can be written with a smaller magnetic field than the one used in conventional TAS-MRAM cells and has low power consumption.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.