Pseudo-open drain type output driver having de-emphasis function, semiconductor memory device, and control method thereof
US8391088B2 · kind B2 · utility
2Cited by
2References
20Claims
0Family size
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Key dates
| Filing date | Nov 4, 2011 |
| Grant date | Mar 5, 2013 |
| Priority date | — |
| Expiry date | Nov 4, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C5/063
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor memory device includes a memory cell array, an output driver having a pseudo-open drain (POD) structure and providing read data from the memory cell array in a de-emphasis mode, and control logic controlling the output driver in response to a read command to activate the de-emphasis mode. The control logic activates the de-emphasis mode only during an output period during which the read data is output by the output driver.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.