Doping of lead-free solder alloys and structures formed thereby
US8395051B2 · kind B2 · utility
2Cited by
3References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 23, 2008 |
| Grant date | Mar 12, 2013 |
| Priority date | — |
| Expiry date | Mar 9, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19043
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming a microelectronic structure are described. Those methods include doping a lead free solder material with nickel, wherein the nickel comprises up to about 0.2 percent by weight of the solder material, and then applying the solder material to a substrate comprising a copper pad.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.