Multilayered semiconductor wafer and process for manufacturing the same

US8395164B2 · kind B2 · utility

Assignee

• Siltronic AG · DE

Inventors

• Brian Murphy · Pfarrkirchen, DE
• Reinhold Wahlich · Burghausen, DE

Key dates

• Filing date: Sep 6, 2011
• Grant date: Mar 12, 2013
• Expiry date: Sep 6, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76254
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Silicon carbide substrate wafers are prepared by transferring a monocrystalline silicon layer from a donor wafer onto a handle wafer, the silicon layer being implanted with carbon and annealed to form a monocrystalline SiC layer prior to or after transfer of the silicon layer.