Surface passivation by quantum exclusion using multiple layers
US8395243B2 · kind B2 · utility
3Cited by
1References
6Claims
0Family size
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Key dates
| Filing date | Jun 15, 2011 |
| Grant date | Mar 12, 2013 |
| Priority date | — |
| Expiry date | Sep 7, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/014
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A semiconductor device has a multilayer doping to provide improved passivation by quantum exclusion. The multilayer doping includes a plurality M of doped layers, where M is an integer greater than 1. The dopant sheet densities in the M doped layers need not be the same, but in principle can be selected to be the same sheet densities or to be different sheet densities. M−1 interleaved layers provided between the M doped layers are not deliberately doped (also referred to as “undoped layers”). Structures with M=2, M=3 and M=4 have been demonstrated and exhibit improved passivation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.