Plasma processing apparatus with an exhaust port above the substrate
US8395250B2 · kind B2 · utility
0Cited by
5References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 2, 2008 |
| Grant date | Mar 12, 2013 |
| Priority date | — |
| Expiry date | Oct 10, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In a chamber of a plasma processing apparatus, a cathode electrode and an anode electrode are disposed at a distance from each other. The cathode electrode is supplied with electric power from an electric power supply portion. The anode electrode is electrically grounded and a substrate is placed thereon. The anode electrode contains a heater. In an upper wall portion of the chamber, an exhaust port is provided and connected to a vacuum pump through an exhaust pipe. In a lower wall portion of a wall surface of the chamber, a gas introduction port is provided. A gas supply portion is provided outside the chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.