Through-substrate via and redistribution layer with metal paste
US8395267B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 21, 2009 |
| Grant date | Mar 12, 2013 |
| Priority date | — |
| Expiry date | Jan 5, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/1461
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and a method for manufacturing such semiconductor device for use in a stacked configuration of the semiconductor device are disclosed. The semiconductor device includes a substrate including at least part of an electronic circuit provided at a first side thereof. The substrate includes a passivation layer and a substrate via that extends from the first side to a via depth such that it is reconfigurable into a through-substrate. The semiconductor device further includes a patterned masking layer on the first side of the substrate. The patterned masking layer includes a trench extending fully through the patterned masking layer. The trench has been filled with a redistribution conductor. The substrate via and the redistribution conductor include metal paste and together form one piece, such that there is no physical interface between the through-substrate via and the redistribution conductor. Thus, the parasitic resistance of this electrical connection is reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.