Controlling a melt-solid interface shape of a growing silicon crystal using an unbalanced magnetic field and iso-rotation
US8398765B2 · kind B2 · utility
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4References
19Claims
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Key dates
| Filing date | Jun 29, 2009 |
| Grant date | Mar 19, 2013 |
| Priority date | — |
| Expiry date | Dec 25, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1032
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A system for growing silicon crystals that facilitates controlling a shape of a melt-solid interface is described. The crystal growing system includes a heated crucible including a semiconductor melt from which a monocrystalline ingot is grown according to a Czochralski process. The ingot is grown on a seed crystal pulled from the melt. The method includes applying an unbalanced cusped magnetic field to the melt, and rotating the ingot and the crucible in the same direction while the ingot is being pulled from the melt.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.