Patent · US Active

Semiconductor wafer composed of monocrystalline silicon and method for producing it

US8398766B2 · kind B2 · utility

0Cited by

6References

17Claims

0Family size

Assignee

Siltronic AG · DE

Inventors

Timo Mueller · Burghausen, DE
Gudrun Kissinger · Lebus, DE
Walter Heuwieser · Stammham, DE
Martin Weber · Borgo San Lazzaro, DE

Key dates

Filing date	Aug 27, 2009
Grant date	Mar 19, 2013
Priority date	—
Expiry date	Oct 23, 2031

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC30B33/02
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

Semiconductor wafers composed of monocrystalline silicon and doped with nitrogen contain an OSF region and a Pv region, wherein the OSF region extends from the center radially toward the edge of the wafer as far as the Pv region; the wafer has an OSF density of less than 10 cm−2, a BMD density in the bulk of at least 3.5×108 cm−3, and a radial distribution of the BMD density with a fluctuation range BMDmax/BMDmin of not more than 3. The wafers are produced by controlling initial nitrogen content and maintaining oxygen within a narrow window, followed by a heat treatment.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.