Method of forming high-k dielectric films based on novel titanium, zirconium, and hafnium precursors and their use for semiconductor manufacturing

US8399056B2 · kind B2 · utility

Assignee

• L'Air Liquide, Societe Anonyme Pour l'Etude et l'Exploitation des Procedes Georges Claude · FR

Inventors

• Nicolas Blasco · Grenoble, FR
• Christian Dussarrat · Tokyo, JP

Key dates

• Filing date: Jun 2, 2006
• Grant date: Mar 19, 2013
• Expiry date: Aug 3, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/0228
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of forming on at least one support at least one metal containing dielectric films having the formula (M11-a M2a) Ob Nc, wherein: 0≦a<1, 01 and M2 being metals Hf, Zr or Ti using precursors with pentadienyl ligands and/or cyclopentadienyl ligands.