Method of forming fine patterns using a block copolymer
US8399174B2 · kind B2 · utility
5Cited by
11References
20Claims
0Family size
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Key dates
| Filing date | Sep 20, 2011 |
| Grant date | Mar 19, 2013 |
| Priority date | — |
| Expiry date | Sep 20, 2031 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2201/0149
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method of patterning a substrate includes processing first regions of the substrate to form a first pattern, the first regions defining a second region between adjacent first regions, arranging a block copolymer on the first and second regions, the block copolymer including a first component and a second component, the first component of the block copolymer being aligned on the first regions, and selectively removing one of the first component and the second component of the block copolymer to form a second pattern having a pitch that is less than a pitch of a first region and an adjacent second region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.