Transistor having an etch stop layer including a metal compound that is selectively formed over a metal gate, and method therefor
US8399317B2 · kind B2 · utility
2Cited by
18References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 14, 2011 |
| Grant date | Mar 19, 2013 |
| Priority date | — |
| Expiry date | Oct 14, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76826
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one aspect, an apparatus may include a metal gate of a transistor. An etch stop layer may be selectively formed over the metal gate. The etch stop layer may include a metal compound. An insulating layer may be over the etch stop layer. A conductive structure may be included through the insulating layer to the metal gate. Methods of making such transistors are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.