Method for producing an electrode structure

US8399325B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Hans Weber · Villach, AT
• Stefan Gamerith · Villach, AT
• Roman Knoefler · Villach, AT
• Kurt Sorschag · Villach, AT
• Anton Mauder · Kolbermoor, DE

Key dates

• Filing date: Sep 22, 2011
• Grant date: Mar 19, 2013
• Expiry date: Sep 22, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/519

Abstract

A method for producing a semiconductor device with an electrode structure includes providing a semiconductor body with a first surface, and with a first sacrificial layer extending in a vertical direction of the semiconductor body from the first surface, and forming a first trench extending from the first surface into the semiconductor body. The first trench is formed at least by removing the sacrificial layer in a section adjacent to the first surface. The method further includes forming a second trench by isotropically etching the semiconductor body in the first trench, forming a dielectric layer which covers sidewalls of the second trench, and forming an electrode on the dielectric layer in the second trench, the electrode and the dielectric layer in the second trench forming the electrode structure.