Establishing a hydrophobic surface of sensitive low-k dielectrics of microstructure devices by in situ plasma treatment

US8399358B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Daniel Fischer · Furth, DE
• Matthias Schaller · Dresden, DE

Key dates

• Filing date: May 25, 2010
• Grant date: Mar 19, 2013
• Expiry date: May 20, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76829
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Silicon oxide based low-k dielectric materials may receive superior hydrophobic surface characteristics on the basis of a plasma treatment using hydrogen and carbon containing radicals. For this purpose, the surface of the low-k dielectric material may be exposed to these radicals, at least in one in situ process in combination with another reactive plasma ambient, for instance used for patterning the low-k dielectric material. Consequently, superior surface characteristics may be established or re-established without significantly contributing to product cycle time.