Semiconductor devices and methods of manufacture thereof
US8399956B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 20, 2009 |
| Grant date | Mar 19, 2013 |
| Priority date | — |
| Expiry date | Dec 11, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of fabricating semiconductor devices and structures thereof are disclosed. In a preferred embodiment, a method of fabricating a semiconductor device includes providing a workpiece having a plurality of trenches formed therein, forming a liner over the workpiece, and forming a layer of photosensitive material over the liner. The layer of photosensitive material is removed from over the workpiece except from over at least a portion of each of the plurality of trenches. The layer of photosensitive material is partially removed from over the workpiece, leaving a portion of the layer of photosensitive material remaining within a lower portion of the plurality of trenches over the liner.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.