Fabricating method of semiconductor device
US8404555B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 10, 2010 |
| Grant date | Mar 26, 2013 |
| Priority date | — |
| Expiry date | Mar 24, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/318
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A fabricating method of a semiconductor device is provided. Pillars are formed on a substrate. A first oxide layer is continuously formed on upper surfaces and side walls of the pillars by non-conformal liner atomic layer deposition. The first oxide layer continuously covers the pillars and has at least one first opening. The first oxide layer is partially removed to expose the upper surfaces of the pillars, and a first supporting element is formed on the side wall of each of the pillars. The first supporting element is located at a first height on the side wall of the corresponding pillar and surrounds the periphery of the corresponding pillar. The first supporting elements around two adjacent pillars are connected and the first supporting elements around two opposite pillars do not mutually come into contact and have a second opening therebetween.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.