Patent · US Active

Method for manufacturing a composite wafer having a graphite core, and composite wafer having a graphite core

US8404562B2 · kind B2 · utility

1Cited by

2References

16Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Rudolf Berger · Munich, DE
Hermann Gruber · Leverkusen, DE
Wolfgang Lehnert · Lintach, DE
Guenther Ruhl · Regensburg, DE
Raimund Foerg · Straubing, DE
Anton Mauder · Kolbermoor, DE
Hans-Joachim Schulze · Taufkirchen, DE

Key dates

Filing date	Sep 30, 2010
Grant date	Mar 26, 2013
Priority date	—
Expiry date	Dec 6, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/02628
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

According to an embodiment, a composite wafer includes a carrier substrate having a graphite core and a monocrystalline semiconductor layer attached to the carrier substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.