Titanium-containing precursors for vapor deposition
US8404878B2 · kind B2 · utility
4Cited by
2References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 30, 2010 |
| Grant date | Mar 26, 2013 |
| Priority date | — |
| Expiry date | Aug 24, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28229
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed are titanium-containing precursors and methods of synthesizing the same. The compounds may be used to deposit titanium, titanium oxide, strontium-titanium oxide, and barium strontium titanate containing layers using vapor deposition methods such as chemical vapor deposition or atomic layer deposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.