Method for removing a deposition on an uncapped multilayer mirror of a lithographic apparatus, lithographic apparatus and device manufacturing method
US8405051B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 9, 2009 |
| Grant date | Mar 26, 2013 |
| Priority date | — |
| Expiry date | Jan 13, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70925
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for removal of a deposition on an uncapped multilayer mirror of an apparatus. The method includes providing a gas that includes one or more of H2, D2, and DH, and one or more additional compounds selected from hydrocarbon compounds and/or silane compounds in at least part of the apparatus; producing hydrogen and/or deuterium radicals and radicals of the one or more additional compounds, from the gas; and bringing the uncapped multilayer mirror with deposition into contact with at least part of the hydrogen and/or deuterium radicals and the radicals of the one or more additional compounds to remove at least part of the deposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.