Semiconductor device including graphene and method of manufacturing the semiconductor device
US8405133B2 · kind B2 · utility
2Cited by
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8Claims
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Key dates
| Filing date | Nov 1, 2011 |
| Grant date | Mar 26, 2013 |
| Priority date | — |
| Expiry date | Nov 1, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/257
Abstract
In a semiconductor device including graphene, a gate insulating layer may be formed between a gate electrode and a graphene layer, and an interlayer insulating layer may be formed under a portion of the graphene layer under which the gate insulating layer is not formed. The gate insulating layer may include a material that has higher dielectric permittivity than the interlayer insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.