Protection circuit for semiconductor device
US8405151B2 · kind B2 · utility
1Cited by
2References
22Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 8, 2010 |
| Grant date | Mar 26, 2013 |
| Priority date | — |
| Expiry date | Mar 16, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/85
Abstract
A protection circuit for a semiconductor device includes a first gate electrode formed on a substrate of a first conductivity type, and a source and a drain of a second conductivity type having an opposite polarity to the first conductivity type. The source and the drain are commonly coupled to a ground voltage terminal, and the first gate electrode is coupled to a power supply voltage terminal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.