Back side illuminated image sensor with improved stress immunity
US8405182B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 2, 2011 |
| Grant date | Mar 26, 2013 |
| Priority date | — |
| Expiry date | Jun 9, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
Abstract
Provided is an image sensor device. The image sensor device includes a substrate having a front side and a back side opposite the first side. The substrate has a pixel region and a periphery region. The image sensor device includes a plurality of radiation-sensing regions disposed in the pixel region of the substrate. Each of the radiation-sensing regions is operable to sense radiation projected toward the radiation-sensing region through the back side. The image sensor device includes a reference pixel disposed in the periphery region. The image sensor device includes an interconnect structure that is coupled to the front side of the substrate. The interconnect structure includes a plurality of interconnect layers. The image sensor device includes a film formed over the back side of the substrate. The film causes the substrate to experience a tensile stress. The image sensor device includes a radiation-blocking device disposed over the film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.