Conductive pillar for semiconductor substrate and method of manufacture
US8405199B2 · kind B2 · utility
10Cited by
6References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 8, 2010 |
| Grant date | Mar 26, 2013 |
| Priority date | — |
| Expiry date | Sep 4, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3512
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An embodiment of the disclosure includes a conductive pillar on a semiconductor die. A substrate is provided. A bond pad is over the substrate. A conductive pillar is over the bond pad. The conductive pillar has a top surface, edge sidewalls and a height. A cap layer is over the top surface of the conductive pillar. The cap layer extends along the edge sidewalls of the conductive pillar for a length. A solder material is over a top surface of the cap layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.