Sensitivity-based complex statistical modeling for random on-chip variation
US8407640B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 23, 2011 |
| Grant date | Mar 26, 2013 |
| Priority date | — |
| Expiry date | Aug 23, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F2119/12
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The invention provides a method for performing statistical static timing analysis using a novel on-chip variation model, referred to as Sensitivity-based Complex Statistical On-Chip Variation (SCS-OCV). SCS-OCV introduces complex variation concept to resolve the blocking technical issue of combining local random variations, enabling accurate calculation of statistical variations with correlations, such as common-path pessimism removal (CPPR). SCS-OCV proposes practical statistical min/max operations for random variations that can guarantee pessimism at nominal and targeted N-sigma corner, and extends the method to handle complex variations, enabling graph-based full arrival/required time propagation under variable compaction. SCS-OCV provides a statistical corner evaluation method for complex random variables that can transform vector-based parametric timing information to the single-value corner-based timing report, and based on the method derives equations to bridge POCV/SSTA with LOCV. This significantly reduces the learning curve and increases the usage of the technology, being more easily adopted by the industry.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.