Method of forming solid blind vias through the dielectric coating on high density interconnect (HDI) substrate materials
US8409982B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 14, 2011 |
| Grant date | Apr 2, 2013 |
| Priority date | — |
| Expiry date | Aug 15, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2203/135
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method includes forming a first substrate by (a) applying an electrodepositable dielectric coating onto a conductive surface; (b) curing the dielectric coating; (c) depositing an adhesion layer and a seed layer onto the dielectric coating; (d) applying a layer of a first removable material to the seed layer; (e) forming openings in the first removable material to expose areas of the seed layer; (f) electroplating a first conductive material to the exposed areas of the seed layer; (g) applying a layer of a second removable material; (h) forming openings in the second removable material to expose areas of the first conductive material; (i) plating a second conductive material to the exposed areas of the first conductive material; (j) removing the first and second removable materials; (k) removing unplated portions of the seed layer; repeating steps (a) through (k) to form a second substrate; and laminating the first and second substrates together with a layer of dielectric material between the first and second substrates to form at least one interconnect between the first and second substrates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.