Method and system for controlling copper chemical mechanical polish uniformity
US8409993B2 · kind B2 · utility
2Cited by
2References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 7, 2007 |
| Grant date | Apr 2, 2013 |
| Priority date | — |
| Expiry date | May 23, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A system and method for controlling resistivity uniformity in a Copper trench structure by controlling the CMP process is provided. A preferred embodiment comprises a system and a method in which a plurality of CMP process recipes may be created comprising at least a slurry arm position. A set of metrological data for at least one layer of the semiconductor substrate may be estimated, and an optimum CMP process recipe may be selected based on the set of metrological data. The optimum CMP process recipe may be implemented on the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.