Method of manufacturing semiconductor device, method of processing substrate, and substrate processing apparatus
US8410003B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 24, 2011 |
| Grant date | Apr 2, 2013 |
| Priority date | — |
| Expiry date | Oct 13, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of manufacturing a semiconductor device includes forming a layer containing a predetermined element on a substrate by supplying a source gas containing the predetermined element into a process vessel and exhausting the source gas from the process vessel to cause a chemical vapor deposition (CVD) reaction. A nitrogen-containing gas is supplied into the process vessel and then exhausted, changing the layer containing the predetermined element into a nitride layer. This process is repeated to form a nitride film on the substrate. The process vessel is purged by supplying an inert gas into the process vessel and exhausting the inert gas from the process vessel between forming the layer containing the predetermined element and changing the layer containing the predetermined element into the nitride layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.