Nonvolatile memory device and method of manufacturing the same
US8410467B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 11, 2010 |
| Grant date | Apr 2, 2013 |
| Priority date | — |
| Expiry date | Jan 30, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/72
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a nonvolatile memory device includes a first wire, a second wire and a nonvolatile memory cell. The first wire is formed to extend in a first direction, and the second wire is formed at height different from height of the first wire and to extend in a second direction. The nonvolatile memory cell is arranged to be held between the first wire and the second wire in a poison where the first wire and the second wire cross. The nonvolatile memory cell includes a nonvolatile storage layer and a current limiting resistance layer connected in series to the nonvolatile storage layer and having resistance of 1 kilo-ohm to 1 mega-ohm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.