MOS transistor with a settable threshold
US8410539B2 · kind B2 · utility
2Cited by
5References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 14, 2007 |
| Grant date | Apr 2, 2013 |
| Priority date | — |
| Expiry date | Nov 12, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0413
Abstract
A MOS transistor comprising a conductive extension of its source region, insulated from its substrate, and partially extending under its channel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.