Pascale Mazoyer
12Patents
3h-index
15Co-inventors
53Inventor score
Filing activity: Sep 18, 2001 → Dec 12, 2011
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7541636B2 | Memory cell comprising one MOS transistor with an isolated body having a reinforced memory effect | Physics | 174 | Active |
| US8186568B2 | Assembly of two parts of an integrated electronic circuit | Emerging Cross-Sectional Technologies | 52 | Active |
| US7709875B2 | Memory cell comprising one MOS transistor with an isolated body having an improved read sensitivity | Electricity | 4 | Active |
| US8410539B2 | MOS transistor with a settable threshold | Electricity | 2 | Active |
| US6958505B2 | Integrated circuit including active components and at least one passive component associated fabrication method | Electricity | 2 | Expired |
| US6798681B2 | DRAM | Physics | 2 | Expired |
| US7829877B2 | Memory structure with a programmable resistive element and its manufacturing process | Physics | 0 | Active |
| US7042039B2 | Integrated memory circuit for storing a binary datum in a memory cell | Physics | 0 | Expired |
| US9219286B2 | Housing, in particular for a biofuel cell | Emerging Cross-Sectional Technologies | 0 | Active |
| US7202518B2 | Integrated dynamic random access memory element, array and process for fabricating such elements | Electricity | 0 | Expired |
| US7008842B2 | Process for fabricating a component, such as a capacitor in an integrated circuit, and integrated-circuit component | Electricity | 0 | Expired |
| US7259414B2 | Integrated circuit, its fabrication process and memory cell incorporating such a circuit | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.