Photodiode with interfacial charge control and associated process

US8410570B2 · kind B2 · utility

Assignees

• STMicroelectronics SA
• STMicroelectronics (Crolles 2) SAS · FR

Inventors

• Jorge Regolini · Bernin, FR
• Michael Gros-Jean · Grenoble, FR

Key dates

• Filing date: May 17, 2010
• Grant date: Apr 2, 2013
• Expiry date: Apr 10, 2031

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

A photodiode includes a first doped layer and a second doped layer that share a common face. A deep isolation trench has a face contiguous with the first and second doped layers. A conducting layer is in contact with a free face of the second doped layer. A protective layer is provided at an interface with the first doped layer and second doped layer. This protective layer is capable of generating a layer of negative charge at the interface. The protective layer may further be positioned within the second doped layer to form an intermediate protective structure.