Jorge Regolini
8Patents
5h-index
11Co-inventors
56Inventor score
Filing activity: Dec 17, 1991 → May 17, 2010
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5876796A | Process for selectively depositing a refractory metal silicide on silicon, and silicon wafer metallized using this process | Electricity | 33 | Expired |
| US5252181A | Method for cleaning the surface of a substrate with plasma | Chemistry; Metallurgy | 24 | Expired |
| US6316818A | Vertical bipolar transistor including an extrinsic base with reduced roughness, and fabrication process | Electricity | 16 | Expired |
| US7187038B2 | Semiconductor device with MOS transistors with an etch-stop layer having an improved residual stress level and method for fabricating such a semiconductor device | Electricity | 8 | Expired |
| US6465332B1 | Method of making MOS transistor with high doping gradient under the gate | Electricity | 6 | Expired |
| US8283707B2 | Reduction of threshold voltage instabilities in a MOS transistor | Electricity | 0 | Active |
| US8410570B2 | Photodiode with interfacial charge control and associated process | Emerging Cross-Sectional Technologies | 0 | Active |
| US6723610B2 | Vertical bipolar transistor including an extrinsic base with reduced roughness, and fabrication process | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.