Magnetic tunnel junction devices, electronic devices including a magnetic tunneling junction device and methods of fabricating the same
US8411498B2 · kind B2 · utility
47Cited by
5References
24Claims
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Key dates
| Filing date | Sep 17, 2010 |
| Grant date | Apr 2, 2013 |
| Priority date | — |
| Expiry date | Jun 16, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Perpendicular magnetic tunnel junction (MTJ) devices, methods of fabricating a perpendicular MTJ device, electronic devices including a perpendicular MTJ device and methods of fabricating the electronic device are provided, the perpendicular MTJ devices include a pinned layer, a tunneling layer and a free layer. At least one of the pinned layer and the free layer includes a multi-layered structure including an amorphous perpendicular magnetic anisotropy (PMA) material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.