Self heating monitor for SiGe and SOI CMOS devices
US8412487B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 7, 2010 |
| Grant date | Apr 2, 2013 |
| Priority date | — |
| Expiry date | Apr 7, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N27/18
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A structure, apparatus and method for deterring the temperature of an active region in semiconductor, particularly a FET is provided. A pair FETs are arranged on a silicon island a prescribed distance from one another where the silicon island is surrounded by a thermal insulator. One FET is heated by a current driven therethrough. The other FET functions as a temperature sensor by having a change in an electrical characteristic versus temperature monitored. By arranging multiple pairs of FETs separated by different known distances, the temperature of the active region of one of the FETs may be determined during operation at various driving currents.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.